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preliminary data sheet the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. ? 1998, 1999 document no. p13617ej4v0ds00 (4th edition) date published december 1999 ns cp(k) printed in japan for optical daa 16-pin ssop optical coupled mos fet the mark ? ? ? ? shows major revised points. solid state relay ocmos fet PS7841-A11 , ps7841-a15 description the PS7841-A11 and ps7841-a15 are solid state relays for optical daa (data access arrangement). they have an ocmos fet, photocoupler, diode bridge and darlington transistor. this device is suitable for analog signal control applications such as laptop pcs, modem cards, voice telephony and fax machines. features ? for optical daa circuit ? ocmos fet ? photocoupler dc input response : PS7841-A11 ac input response : ps7841-a15 ? diode bridge ? darlington transistor ? low led operating current (i f = 2 ma) ? small and thin package (16-pin ssop: 5.72 mm (225), pin pitch = 1.27 mm, height = 2.1 mm) ? ordering number of taping product: PS7841-A11-f3, f4, ps7841-a15-f3, f4 ? ul approved: file no. e72422 (s) applications ? laptop pc, pda ? modem card ? telephone, fax
preliminary data sheet p13617ej4v0ds00 2 PS7841-A11,ps7841-a15 package dimensions (in millimeters) ps7841-a15 top view 16 14 15 12 13 10 11 9 13 25 478 6 PS7841-A11 top view 16 14 15 12 13 10 11 9 13 25 478 6 0.15 +0.10 C0.05 0.50.3 4.4 7.00.3 0.40 +0.10 C0.05 0.12 m 1.27 10.30.3 0.05 +0.08 C0.05 2.05 +0.08 C0.05 0.15 +0.10 C0.05 0.50.3 4.4 7.00.3 0.40 +0.10 C0.05 0.12 m 1.27 10.30.3 0.05 +0.08 C0.05 2.05 +0.08 C0.05 9. led anode 10. led cathode 11. di. input 12. di. output 13. tr. emitter (darlington) 14. tr. base (darlington) 15. mos fet 16. mos fet 1. nc 2. led anode 3. led cathode 4. nc 5. nc 6. nc 7. tr. collector 8. tr. emitter 9. led anode, cathode 10. led cathode, anode 11. di. input 12. di. output 13. tr. emitter (darlington) 14. tr. base (darlington) 15. mos fet 16. mos fet 1. nc 2. led anode 3. led cathode 4. nc 5. nc 6. nc 7. tr. collector 8. tr. emitter
preliminary data sheet p13617ej4v0ds00 3 PS7841-A11,ps7841-a15 absolute maximum ratings (t a = 25 c, unless otherwise specified) parameter symbol ratings unit ocmos fet diode forward current (dc) i f 50 ma (pin no. 2, 3, 15, 16) reverse voltage v r 5.0 v power dissipation p d 50 mw peak forward current *1 i fp 1a mos fet break down voltage v l 400 v continuous load current i l 120 ma pulse load current *2 (ac/dc connection) i lp 250 ma power dissipation p d 430 mw photocoupler diode forward current i f 50 ma (pin no. 7, 8, 9, 10) reverse voltage *3 v r 5.0 v power dissipation p d 50 mw peak forward current *1 i fp 1a transistor collector to emitter voltage v ceo 40 v collector current i c 80 ma power dissipation p c 50 mw diode bridge forward current i f 140 ma (pin no. 10, 11, 12, 15) reverse voltage v r 100 v darlington transistor collector to emitter voltage v ceo 40 v (pin no. 12, 13, 14) collector current i c 120 ma power dissipation p c 500 mw isolation voltage *4 bv 1 500 vr.m.s. total power dissipation p t 650 mw operating ambient temperature t a - 40 to +80 c storage temperature t stg - 40 to +100 c *1 pw = 100 m s, duty cycle = 1 % *2 pw = 100 ms, 1 shot *3 PS7841-A11 only *4 ac voltage for 1 minute at t a = 25 c, rh = 60 % between input and output recommended operating conditions (t a = 25 c) parameter symbol min. typ. max. unit ocmos fet led operating current i f 21020ma led off voltage v f 00.5v
preliminary data sheet p13617ej4v0ds00 4 PS7841-A11,ps7841-a15 electrical characteristics (t a = 25 c) ocmos fet (pin no. 2, 3, 15, 16) parameter symbol conditions min. typ. max. unit diode forward voltage v f i f = 10 ma 1.2 1.4 v mos fet off-state leakage current i loff v d = 400 v 1.0 m a coupled led on-state current i fon i l = 120 ma 2.0 ma on-state resistance r on1 i f = 10 ma, i l = 10 ma 20 30 w r on2 i f = 10 ma, i l = 120 ma, t 10 ms 16 25 turn-on time t on i f = 10 ma, v o = 5 v, pw 3 10 ms 0.3 1.0 ms turn-off time t off 0.04 0.2 isolation resistance r i-o v i-o = 500 v dc 10 9 w isolation capacitance c i-o v = 0 v, f = 1 mhz 1.1 pf photocoupler (pin no. 7, 8, 9, 10) parameter symbol conditions min. typ. max. unit diode forward voltage v f i f = 10 ma 1.2 1.4 v transistor collector to emitter dark current i ceo v ce = 40 v, i f = 0 ma 0.1 m a coupler current transfer ratio (i c /i f )ctri f = 5 ma, v ce = 5 v 50 200 400 % collector saturation voltage v ce (sat) i f = 10 ma, i c = 2 ma 0.1 0.3 v rise time t r v cc = 5 v, i c = 2 ma, r l = 100 w 3.0 m s fall time t f 5.0 isolation resistance r i-o v i-o = 500 v dc 10 11 w isolation capacitance c i-o v = 0 v, f = 1 mhz 0.4 pf diode bridge (pin no. 10, 11, 12, 15) parameter symbol conditions min. typ. max. unit forward voltage v f i f = 120 ma 0.9 1.2 v reverse current i r v r = 100 v 10 m a darlington transistor (pin no. 12, 13, 14) parameter symbol conditions min. typ. max. unit collector saturation voltage v ce (sat) i c = 120 ma, i b = 100 m a1.01.4v collector to emitter dark current i cex i b = 0 ma, v ce = 30 v 0.01 1.0 m a dc current gain h fe i c = 120 ma, v ce = 10 v 10 000 35 000
preliminary data sheet p13617ej4v0ds00 5 PS7841-A11,ps7841-a15 ocmos typical characteristics (t a = 25 c, unless otherwise specified) load current vs. load voltage load current i l (ma) load voltage v l (v) 0 2.0 1.0 3.0 C1.0 C2.0 C3.0 C50 C150 50 100 150 C100 i f = 10 ma 100 80 60 40 20 0 C20 0 20 40 60 80 100 maximum forward current i f (ma) ambient temperature t a (?c) maximum forward current vs. ambient temperature 0.3 0.2 0.1 0 C20 0 20 40 60 80 100 maximum load current i l (a) ambient temperature t a (?c) maximum load current vs. ambient temperature i f = 30 ma 20 ma 10 ma 5 ma 2.0 1.5 1.0 0.5 0.0 C40 0 20 40 60 80 100 C20 forward voltage v f (v) ambient tempetaure t a (?c) forward voltage vs. ambient temperature f = 1 mhz 200 150 100 50 0 20 40 60 80 100 120 output capacitance c out (pf) applied voltage v d (v) output capacitance vs. applied voltage off-state leakage current i loff (a) applied voltage v d (v) off-state leakage current vs. applied voltage 500 100 0 200 300 400 10 C7 10 C6 10 C5 10 C8 10 C9 25 ?c t a = 80 ?c
preliminary data sheet p13617ej4v0ds00 6 PS7841-A11,ps7841-a15 turn-on time vs. forward current turn-on time t on (ms) forward current i f (ma) 6.0 5.0 4.0 3.0 2.0 0 1.0 51015202530 v o = 5 v turn-off time vs. forward current turn-off time t off (ms) forward current i f (ma) 0.30 0.25 0.20 0.10 0.05 0 0.15 51015202530 v o = 5 v turn-on time distribution number (pcs) turn-on time t on (ms) 30 25 20 10 5 0 15 0.3 0.4 n = 50 pcs, i f = 10 ma, v o = 5 v n = 50 pcs, i f = 10 ma, v o = 5 v turn-off time distribution number (pcs) turn-off time t off (ms) 30 25 20 10 5 0 15 0.04 0.08 n = 50 pcs, i f = 10 ma, i l = 10 ma 30 25 20 10 5 0 15 20 21 on-state resistance distribution number (pcs) on-state resistance r on ( w ) normalized to 1.0 at t a = 25 ?c, i f = 10 ma, i l = 10 ma 3.0 2.5 2.0 1.5 0.5 0 1.0 C25 0 25 50 75 100 ambient temperature t a (?c) normalized on-state resistance r on normalized on-state resistance vs. ambient temperature
preliminary data sheet p13617ej4v0ds00 7 PS7841-A11,ps7841-a15 normalized to 1.0 at t a = 25 ?c, i f = 10 ma, v o = 5 v C25 0 25 50 75 100 normalized turn-off time t off ambient temperature t a (?c) normalized turn-off time vs. ambient temperature normalized to 1.0 at t a = 25 ?c, i f = 10 ma, v o = 5 v 3.0 2.5 2.0 1.5 1.0 0.0 0.5 C25 0 25 50 75 100 normarlized turn-on time t on ambient temperature t a (?c) normalized turn-on time vs. ambient temperature 3.0 2.5 2.0 1.5 1.0 0.0 0.5 remark the graphs indicate nominal characteristics.
preliminary data sheet p13617ej4v0ds00 8 PS7841-A11,ps7841-a15 photocoupler typical characteristics (t a = 25 c, unless otherwise specified) v ce = 40 v 24 v 10 v 10 000 1 000 100 10 1 0.1 C60 C20 0 40 60 80 100 C40 20 collector to emitter dark current i ceo (na) ambient temperature t a (?c) collector to emitter dark current vs. ambient temperature 200 150 100 50 0 25 50 75 80 100 maximum collector current i c (ma) ambient temperature t a (?c) muximum collector current vs. ambient temperature 100 75 50 25 0 25 50 75 80 100 maximum forward current i f (ma) ambient temperature t a (?c) maximum forward current vs. ambient temperature t a = +100 ?c +75 ?c +50 ?c +25 ?c 0 ?c C25 ?c C55 ?c 100 10 1 0.1 0.01 0.6 0.8 1.0 1.2 1.4 1.6 forward current i f (ma) forward voltage v f (v) forward current vs. forward voltage i f = 25 ma 10 ma 5 ma 2 ma 1 ma 20 10 1 0.5 0.1 5 2 0.2 0.0 0.2 0.4 0.6 0.8 1.0 collector current i c (ma) collector saturation voltage v ce(sat) (v) collector current vs. collector saturation voltage i f = 30 ma 20 ma 15 ma 10 ma 5 ma 50 40 30 20 10 0 24 68 10 collector current i c (ma) collector to emitter voltage v ce (v) collector current vs. collector to emitter voltage
preliminary data sheet p13617ej4v0ds00 9 PS7841-A11,ps7841-a15 v ce = 5 v 300 250 150 100 50 0 200 0.05 0.1 0.5 1 5 10 50 current transfer ratio ctr (%) forward current i f (ma) current transfer ratio vs. forward current i f = 5 ma, v cc = 5 v, t a = 25 ?c, ctr = 100 % t s t d t r t f 1 000 500 100 10 1 0.5 50 5 0.1 100 500 1k 5k 10k 50k 100k load resistance r l ( w ) switching time vs. load resistance switching time t ( s) m normalized to 1.0 at t a = 25 ?c, i f = 5 ma, v ce = 5 v 1.2 1.0 0.6 0.4 0.2 0.0 0.8 C50 C25 0 25 50 75 100 ambient temperature t a (?c) normalized current transfer ratio vs. ambient temperature normalized current transfer ratio ctr load resistance r l ( w ) switching time vs. load resistance switching time t ( s) m v cc = 5 v, i c = 2 ma 100 1 0.5 0.1 50 10 5 50 100 500 1k 2k 200 t on t d t off t s remark the graphs indicate nominal characteristics.
preliminary data sheet p13617ej4v0ds00 10 PS7841-A11,ps7841-a15 taping specifications (in millimeters) outline and dimensions (tape) 1.550.1 12.00.1 2.00.1 4.00.1 1.550.1 1.750.1 7.50.1 16.00.3 7.60.1 2.80.1 10.450.1 0.3 tape direction PS7841-A11-f3 ps7841-a15-f3 PS7841-A11-f4 ps7841-a15-f4 outline and dimensions (reel) packing: 1 500pcs/reel 2.00.5 21.00.8 f 330 1005.0 16.4 +2.0 C0.0 13.01.0 2.5
preliminary data sheet p13617ej4v0ds00 11 PS7841-A11,ps7841-a15 recommended soldering conditions (1) infrared reflow soldering ? peak reflow temperature 235 c (package surface temperature) ? time of temperature higher than 210 c 30 seconds or less ? number of reflows one ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt % is recommended.) 60 to 120 s (preheating) 210 ?c 100 to 160 ?c package surface temperature t (?c) time (s) (heating) to 10 s to 30 s 235 ?c (peak temperature) recommended temperature profile of infrared reflow (2) dip soldering ? temperature 260 c or below (molten solder temperature) ? time 10 seconds or less ? number of times one ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt % is recommended.) (3) cautions ?fluxes avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. ? portion of frame this device should be used without wiring the underside. 16 1 portion of frame
PS7841-A11,ps7841-a15 caution within this device there exists gaas (gallium arsenide) material which is a harmful substance if ingested. please do not under any circumstances break the hermetic seal. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. nec corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. m7 98. 8

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